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WNM2030 - N-Channel MOSFET

Description

The WNM2030 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-723.

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Datasheet Details

Part number WNM2030
Manufacturer Will Semiconductor
File Size 273.15 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM2030 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM2030 WNM2030 Single N-Channel, 20V, 0.95A, Power MOSFET Http://www.sh-willsemi.com VDS (V) 20 Rds(on) (ȍ) 0.210@ VGS=4.5V 0.250@ VGS=2.5V 0.305@ VGS=1.8V ESD Protected Descriptions The WNM2030 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2030 is Pb-free.
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