z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-323 Applicatio.

SOT-323 D 3 12 GS Pin configuration (Top view) 3 29* 12 29 = Device Code * = Month (A~Z) Marking Order information z D.

The WNM2029 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. .

WNM2020

WNM2020-3

WNM2021

WNM2023

WNM2024

WNM2025

WNM2027

WNM2016

WNM2030

WNM2030-3

WNM2034

WNM2046

WNM2046B

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