z z z z z -30V/-5A,RDS(ON)= 36mŸ@VGS=- 10V -30V/-4A,RDS(ON)= 53mŸ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximu.

OR USES AS CRITICAL PD COMPONENTS 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIA.

The WPM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

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