W332M64V-XBX - 32Mx64 Synchronous DRAM

Product Overview

White Electronic Designs

Part number	W332M64V-XBX
Manufacturer	White Electronic Designs
File Size	352.99 KB
Description	32Mx64 Synchronous DRAM
Datasheet	W332M64V-XBX Datasheet
Additional preview pages of the W332M64V-XBX datasheet.

The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 536,870,912 bits.

Each chip is internally conﬁgured as a quad-bank DRAM with a synchronous interface.

Each of the chip’s 134,217,728-bit banks is organized as 8,192 rows by 1,024 columns by 16 bits.

High Frequency = 100, 125, 133MHz Package:.
219 Plastic Ball Grid Array (PBGA), 25 x 25mm 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive edge of system clock cycle Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable Burst length 1,2,4,8 or full page 8192 refresh cycles Commercial, Industrial and Military Temperature Ranges Organized as 32M x 64 Weight: W332M64V-XBX - 2.5.

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Published: Apr 28, 2010 |