MMBTH10 Datasheet | Weitron Technology

.. NPN Silicon VHF/UHF Transistor P b Lead(Pb)-Free BASE COLLECTOR 3 1 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 25 30 3.0 Unit Vdc Vdc Vdc m Adc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board(1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R θJA TJ, Tstg V alue 225 1.8 556 -55 to +150 Unit m W m W/ C C/W C Device Marking MMBTH10=3EM ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 m Adc, I B =0) Collector-Base Breakdown Voltage (IC= 100 u Adc, I E =0) Emitter-Base Breakdown Voltage (IE= 10 u Adc, I C=0) Collector Cutoff Current (VCB= 25Vdc, I E=0) Emitter Cutoff Current (VEB= 2.0 V dc, I C =0) 1. FR-5=1.0 I I 0.75 I I 0.062 in Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 25 30 3.0 Max 100 100 Unit Vdc Vdc Vdc n Adc n Adc WEITRON http://.weitron..tw 1/5 29-Aug-05 ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C=4.0 m Adc, V CE=10 Vdc) Collector-Emitter Saturation Voltage (IC=4.0 m Adc, I B =0.4 m Adc) Base-Emitter On Voltage (I C =4.0 m Vdc, VCE =10 V) h FE V CE(sat) VBE(on) 60 0.5 Vdc - 0.95 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C=4.0 m Adc, V CE=10 Vdc, f=100MHz) Collector-Base Capacitance (VCB=10 Vdc, I E =0, f=1.0 MHz) mon-Base Feedback Capacitance (VCB =10 Vdc, IE=0 , f=1.0 MHz) Collector Base Time Constant (I C =4.0 m Vdc, V CB =10 Vdc, f=31.8 MHz) f T Ccb C rb rb ‘C c 650 0.7 MHz PF PF Ps - 0.65 9.0 WEITRON http://.weitron..tw 80 yib, INPUT ADMITTANCE(mmhos) 70 60 50 40 30 20 10 0 100 200 300 400 500 700 1000 0 10 20 30 40 gib(mmhos) 50 60 70 80 ib jb jb(mmhos) 1000 MHz 700 400 200 100 gib 0 FIG.1 Rectangular Form yib,...