NXPSC10650D
NXPSC10650D is Silicon Carbide Diode manufactured by WeEn.
description
Silicon Carbide Schottky diode designed for high frequency switched mode power supplies in a TO252 (DPAK) plastic package.
2. Features and benefits
- Highly stable switching performance
- High forward surge capability IFSM
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- Ro HS pliant
3. Applications
- Power factor correction
- Tele/Server SMPS
- UPS
- PV inverter
- PC Silverbox
- LED/OLED TV
- Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM repetitive peak reverse voltage
IF(AV) average forward current
δ = 0.5 ; Tmb ≤ 113 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3; Fig. 4
Static characteristics
VF forward voltage
IF = 10 A; Tj = 25 °C; Fig. 6
IF = 10 A; Tj = 150 °C; Fig. 6
Min Typ Max Unit
- - 650 V
- - 10 A
- 1.5 1.7 V
- 1.8 2.1 V
We En Semiconductors
Silicon Carbide Diode
5. Pinning information
Table 2. Pinning information Pin Symbol...
