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BTA41-600B Datasheet Preview

BTA41-600B Datasheet

4Q Triac

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BTA41-600B
4Q Triac
10 July 2017
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits
where high static and dynamic dV/dt and high dI/dt can occur. This triac will commutate the full RMS
current at the maximum rated junction temperature (Tj(max) = 150 °C). It is used in applications where
"high junction operating temperature capability" is required.
2. Features and benefits
High current TRIAC
Low thermal resistance
High junction operating temperature capability (Tj(max) = 150 °C)
High voltage capability
Planar passivated for voltage ruggedness and reliability
Insulated tab rated at 2500 V rms
3. Applications
High current / high surge applications
High power / industrial controls -- e.g. heating, motors, lighting
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM non-repetitive peak on-
state current
Tj junction temperature
Conditions
square-wave pulse; Tmb ≤ 105 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; tp = 20 ms; Tj(init) = 25 °C;
Fig. 4; Fig. 5
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C;
Values
600
40
400
440
150
Unit
V
A
A
A
°C




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BTA41-600B Datasheet Preview

BTA41-600B Datasheet

4Q Triac

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WeEn Semiconductors
Symbol Parameter
Static characteristics
IGT gate trigger current
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 56.6 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 20A;
dVcom/dt = 20 V/μs; gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 20A;
dVcom/dt = 20 V/μs; gate open circuit
BTA41-600B
4Q Triac
Min Typ Max Unit
- - 50 mA
- - 50 mA
- - 50 mA
- - 70 mA
- - 80 mA
- 1.2 1.5 V
750 - - V/μs
500 - - V/μs
20 - - A/ms
10 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1
main terminal 1
2 T2
main terminal 2
3G
mb n.c.
gate
mounting base; isolated
Simplified outline
1 23
IITO3P (SOT1292)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA41-600B
IITO3P
Description
plastic single-ended through-hole package; isolated heatsink
mounted; 1 mounting hole; 3-lead TO3P
Version
SOT1292
7. Marking
Table 4. Marking codes
Type number
BTA41-600B
BTA41-600B
Product data sheet
Marking codes
BTA41-600B
All information provided in this document is subject to legal disclaimers.
10 July 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
2 / 12


Part Number BTA41-600B
Description 4Q Triac
Maker WeEn
Total Page 12 Pages
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