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BTA316B-600B0 Datasheet Preview

BTA316B-600B0 Datasheet

3Q Hi-Com Triac

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BTA316B-600B0
3Q Hi-Com Triac
14 August 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT404 plastic package intended for
use in circuits where high static and dynamic dV/dt and high dI/ dt can occur. This "series B0" triac
will commutate the full RMS current at the maximum rated junction temperature without the aid of a
snubber.
2. Features and benefits
3Q technology for improved noise immunity
High immunity to false turn-on by dV/dt
High minimum IGT for guaranteed immunity to gate noise
High voltage capability
Surface mountable package
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very high commutation capability with maximum false trigger immunity
3. Applications
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Refrigeration and air conditioning compressors
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 101 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 16 A
- - 140 A
- - 150 A
- - 125 °C
10 -
50 mA




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BTA316B-600B0 Datasheet Preview

BTA316B-600B0 Datasheet

3Q Hi-Com Triac

No Preview Available !

WeEn Semiconductors
BTA316B-600B0
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 18 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM ); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A;
dVcom/dt = 10 V/µs; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A;
dVcom/dt = 1 V/µs; gate open circuit
Min Typ Max Unit
10 -
50 mA
10 -
50 mA
- - 60 mA
- 1.3 1.5 V
2500 - - V/µs
20 - - A/ms
30 - - A/ms
50 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
2
13
D2PAK (SOT404)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA316B-600B0
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3
leads (one lead cropped)
Version
SOT404
7. Marking
Table 4. Marking codes
Type number
BTA316B-600B0
Marking code
BTA316B-600B0
BTA316B-600B0
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 August 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
2 / 13


Part Number BTA316B-600B0
Description 3Q Hi-Com Triac
Maker WeEn
Total Page 13 Pages
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