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BTA316-800CT Datasheet Preview

BTA316-800CT Datasheet

3Q Triac

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BTA316-800CT
3Q Triac
Rev.01 - 26 September 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for
use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac
will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C)
without the aid of a snubber. It is used in applications where "high junction operating temperature
capability" is required.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High junction operating temperature capability (Tj(max) = 150 °C)
High immunity to false turn-on by dV/dt
High voltage capability
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Applications subject to high temperature (Tj(max) = 150 °C)
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM non-repetitive peak on-
state current
Tj junction temperature
Conditions
full sine wave; Tmb ≤ 131 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; tp = 20 ms; Tj(init) = 25 °C;
Fig. 4; Fig. 5
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C
Values
800
16
140
150
150
Unit
V
A
A
A
°C




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BTA316-800CT Datasheet Preview

BTA316-800CT Datasheet

3Q Triac

No Preview Available !

WeEn Semiconductors
Symbol Parameter
Static characteristics
IGT gate trigger current
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 18 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 20 V/μs; gate open circuit;
snubberless condition
BTA316-800CT
3Q Triac
Min Typ Max Unit
2-
35 mA
2-
35 mA
2-
35 mA
- - 35 mA
- 1.3 1.5 V
500 - - V/μs
200 - - V/μs
8 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1
main terminal 1
Simplified outline
mb
2 T2
main terminal 2
3G
gate
mb T2
mounting base; main terminal 2
Graphic symbol
T2
sym051
T1
G
123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BTA316-800CT
TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
BTA316-800CT
BTA316-800CT
Product data sheet
Marking codes
BTA316-800CT
All information provided in this document is subject to legal disclaimers.
26 September 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
2 / 12


Part Number BTA316-800CT
Description 3Q Triac
Maker WeEn
Total Page 12 Pages
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