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BTA204S-600B Datasheet Preview

BTA204S-600B Datasheet

3Q Hi-Com Triac

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BTA204S-600B
3Q Hi-Com Triac
31 May 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface-mountable
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can
occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction
temperature without the aid of a snubber.
2. Features and benefits
3Q technology for improved noise immunity
High blocking voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in three quadrants only
3. Applications
General purpose motor control circuits
Home appliances
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 4A
- - 25 A
- - 27 A
- - 125 °C
- - 50 mA




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BTA204S-600B Datasheet Preview

BTA204S-600B Datasheet

3Q Hi-Com Triac

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WeEn Semiconductors
BTA204S-600B
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 5 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
Min Typ Max Unit
- - 50 mA
- - 50 mA
- - 30 mA
- 1.4 1.7 V
1000 - - V/µs
6 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2
mounting base; main
terminal 2
Simplified outline
Graphic symbol
T2
sym051
T1
G
DPAK (SOT428)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA204S-600B
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BTA204S-600B
Product data sheet
All information provided in this document is subject to legal disclaimers.
31 May 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 14


Part Number BTA204S-600B
Description 3Q Hi-Com Triac
Maker WeEn
Total Page 14 Pages
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