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BTA2008-800E Datasheet Preview

BTA2008-800E Datasheet

3Q Hi-Com Triac

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BTA2008-800E
3Q Hi-Com Triac
28 September 2016
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. This
"series E" triac balances the requirements of commutation performance and gate sensitivity and is
intended for interfacing with low power drivers and logic ICs including microcontrollers.
2. Features and benefits
3Q technology for improved noise immunity
Direct gate triggering from low power drivers and logic ICs
High commutation capability with sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
Low power motor controls
Small inductive loads e.g. solenoids, door locks, water valves
Small loads in large white goods
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 70 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 800 V
- - 0.8 A
- - 9A
- - 9.9 A
- - 125 °C
0.5 -
0.5 -
10 mA
10 mA




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BTA2008-800E Datasheet Preview

BTA2008-800E Datasheet

3Q Hi-Com Triac

No Preview Available !

WeEn Semiconductors
BTA2008-800E
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 0.85 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C;
IT(RMS) = 0.8 A; dVcom/dt = 10 V/µs;
gate open circuit
Min Typ Max Unit
0.5 -
10 mA
- - 12 mA
- 1.35 1.6 V
600 - - V/µs
1.6 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T2 main terminal 2
2 G gate
3 T1 main terminal 1
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA2008-800E
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
BTA2008-800E
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 September 2016
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
2 / 13


Part Number BTA2008-800E
Description 3Q Hi-Com Triac
Maker WeEn
Total Page 13 Pages
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