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BTA16-600B Datasheet Preview

BTA16-600B Datasheet

4Q Triac

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BTA16-600B
4Q Triac
Rev.01 - 14 June 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78D (IITO-220) internally insulated plastic package
intended for use in general purpose bidirectional switching and phase control applications.
2. Features and benefits
High voltage capability
Least sensitive gate for highest noise immunity
High junction operating temperature capability (Tj(max) = 150 °C)
High minimum IGT for guaranteed immunity to gate noise
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
Internally insulated package
Isolated mounting base with 2500 V (RMS) isolation
3. Applications
Applications subject to high temperature (Tj(max) = 150 °C)
Compressor starting control circuits
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM non-repetitive peak on-
state current
Tj junction temperature
Conditions
full sine wave; Tmb ≤ 112 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; tp = 20 ms; Tj(init) = 25 °C;
Fig. 4; Fig. 5
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C
Values
600
16
160
176
150
Unit
V
A
A
A
°C




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BTA16-600B Datasheet Preview

BTA16-600B Datasheet

4Q Triac

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WeEn Semiconductors
Symbol Parameter
Static characteristics
IGT gate trigger current
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 20 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VDM = 402 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 20 V/μs; gate open circuit;
snubberless condition
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1
main terminal 1
2 T2
main terminal 2
3G
mb n.c
gate
mounting base; isolated
Simplified outline
BTA16-600B
4Q Triac
Min Typ Max Unit
10 -
50 mA
10 -
50 mA
10 -
50 mA
10 -
70 mA
- - 60 mA
-
1.22 1.5
V
500 - - V/μs
400 - - V/μs
2 - - A/ms
Graphic symbol
T2
sym051
T1
G
1 23
IITO-220 (SOT78D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BTA16-600B
IITO-220 Plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3 leads TO-220
Version
IITO-220E
7. Marking
Table 4. Marking codes
Type number
BTA16-600B
BTA16-600B
Product data sheet
Marking codes
BTA16-600B
All information provided in this document is subject to legal disclaimers.
14 June 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 12


Part Number BTA16-600B
Description 4Q Triac
Maker WeEn
Total Page 12 Pages
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