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SB2530DC Datasheet Preview

SB2530DC Datasheet

25A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

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®
WON-TOP ELECTRONICS
SB2520DC – SB25100DC
25A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Pb
Features
Low Forward Voltage
Epitaxial Construction with Oxide Passivation
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 200A Peak
Low Power Loss, High Efficiency
Fast Switching
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Switching
Power Supplies
Mechanical Data
Case: D2PAK/TO-263, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
AJ
B
D
G
H
PIN 1
PIN 3
PIN 1 2
E
3
PP
Case, PIN 2
K
D2 PAK/TO-263
Dim Min Max
A 9.80 10.40
B 9.60 10.60
C 4.40 4.80
D 8.50 9.10
E — 2.80
G 1.00 1.40
H — 0.99
J 1.20 1.40
K 0.30 0.70
P 2.35 2.75
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current Total Device
@TC = 100°C
Per Diode
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
Forward Voltage
per diode
@IF = 12.5A, TJ = 25°C
@IF = 12.5A, TJ = 125°C
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
Typical Junction Capacitance (Note 1)
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Case (Note 2)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
SB SB SB SB SB SB SB SB Unit
2520DC 2530DC 2540DC 2545DC 2550DC 2560DC 2580DC 25100DC
20 30 40 45 50 60 80 100 V
VR(RMS) 14 21 28 32 35 42 56 70
V
IO
25
12.5
A
IFSM
200 A
VFM
IRM
CJ
R JA
R JC
TJ, TSTG
0.62
0.57
0.75
0.65
0.85
0.75
V
1.0
20
mA
750 500 pF
55
1.5
°C/W
-55 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1




WON-TOP

SB2530DC Datasheet Preview

SB2530DC Datasheet

25A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

No Preview Available !

SB2520DC – SB25100DC
25
20
15
10
5
Resistive or
Inductive Load
0
0 15 30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
250
Single Half-Sine-Wave
JEDEC Method
200
150
100
50
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
20
18
DC, TJ = 150°C
Per Diode
16
14
12
10
2580DC – 25100DC
8
2550DC – 2560DC
6
2520DC – 2545DC
4
2
0
0 2 4 6 8 10 12 14 16 18 20
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation
www.wontop.com
2
®
100
Pulse Width = 300µs
1% Duty Cycle
TJ = 25°C
2550DC – 2560DC
10
2520DC – 2545DC
WON-TOP ELECTRONICS
1.0
2580DC – 25100DC
0.1
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
10 TJ = 125°C
TJ = 100°C
1.0
0.1
0.01
TJ = 25°C
0.001
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
2000
1600
f = 1MHz
1200
800
400
2520DC – 2545DC
2550DC – 25100DC
0
0.1
1 10
VR, DC REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance
100
© Won-Top Electronics Co., Ltd.
Revision: September, 2012


Part Number SB2530DC
Description 25A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Maker WON-TOP
Total Page 4 Pages
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