WILLAMSC C ETSHFM120-M+30000W AXIAL
ES30KPFSMe1ri2e0s0-M+1.0A SURFACE
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Free Product
Features
Features
Package outline
• Batch process design, excellent•powLeer addissFipreaetioFninofifsehr/sRoHS Compliant(Note 1) ("P" Suffix designates
2 Amp•
Recove(Cathode•
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SOD-123H
0.146(3.7)
50 to•
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s
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capability,
apability.
l
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w
f
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wxa
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rd
vRooltHagSe cdoromp.pliant
0.130(3.3)
0.012(0.3) Typ.
Super fast switching speed under 35ns
TMyaprickainl gm:aCxiamthuomdteembapnedraatunrde tcyopeeffincuiemntberV(BNR=o0'.-1L%' SxVufBfRix@) 25°Cx T
Guar
Ultra
dring
high-
for.0o52v(e1r.3v2o) ltDaIgAe. p
sp.e04e7d(1s.2w0i)tching.
ro
te
ctionP. lastic
package
0.071(1.8)
Maximum Ratings• Silicon epitaxial planar chip, metal sGiliclaosnsjupnactsiosniv.ated junction
0.056(1.4)
DO• Lead-free parts meet environme•ntal3sO0tap0ne0dr0aaWrtdinsgPoefTaekmPpuerlsaetuPreo:w-6e5rкcatpoa+b1ili7ty5кon 10/1000µs waveform
•
MIL-STD-19500
RoHS product for
/228
packing
code
•
suffix
"GES"xtcoerallgeentTcelmampeprinatgurcea:p-a6b5iкlityto
+175к
(SMA) (LE
Halogen free product for packing code sRufefipx e"Hti"tion rate (duty cycle):0.05%
H
Mechanical data
LoMwCinCcrementalMsauxrgimeurmesistance
Maximum DC
.360(9.14)
.338(8.60)
•
•
•
•
TCEeparosmexiyn: :aMUlosLl:d9MPe4lead-tVthpe0oldadr..33stae632tt0i8re0c((m98d,2..iS166fn40lOaa)) DmlDsIA-,e1.sr2oe3ltdaHerdrPaaFHMab(EEEn9rlaitSeSSatg.s5tN222phttmeeDABurtree--mm-TMLLLsmib)npILpeloeL-erSnaersTadaeDtdulP-et-7rifenme5rRaeg0V21eeske5t,o00hc:o0Rlup00,tltVdyarelVV5arpegvletbireeecnisnradts.gl,ely(g2lue.03a.s0Rk3rs1agMM(0nt).1h8Sat37)te4aTxe50yV0enipnVVm.Vdos1ul:it.oam20ng6pe0s°fCro/4m0B0Vs12l5eooV000lcc00otVaokVVltignsnedgtso/.B3V700..005024.0"403((,011..(600)).8)
Polarity : Indicated by cathode baMndEECSH2AGN-LICAL DATA400V
Dimensions in inches and (millimeters)
280V
400V
Typ.
• Mounting Position : Any
CasEeS: 2MJo-Llded plastic6o0v0eVr glass pass4iv2a0tVed junction 600V
• Weight : Approximated 0.011 grEalmTeecrtmriicnaallC: ShoalrdaecrtaebrliestpiecrsM@IL2-5S°TCDU-7n5le0,sMs Oetthhoedrw2i0s2e6Specified
E
MAXIMUM RATINGS APACNovuDlearrrEreaiLtngyEte:CCFeToxoRcrlwoeIrCapbrtAdaBLnipCdoHdlaeArnRoAItFeC(AsTVp)EoRsIiStivTeI2C.e0SnAd (caTthL=od1e1)0к
RSiantginlegsphaat s2e5℃halfawmabvieen, t6t0eHmzp,ererastiusrtieveunolfeisnsdMWuPCocoteehutiuieavrgrrenkwehtlinFostina:teodg0rs.wp.0Pea7coriodfsieuiSdtn.iuocreng,e: 2A.n3ygraIFmSM
50A 8.3ms, half sine
DFimorencasipoancsiitnivienclhoeasda, ndde(rmatiellimcuertreersn)t by 20% Maximum
F
G
INCHES
DIM MIN
MAX
A .079
.096
RATINGS
DEIVnIsCtaEnSSYtaMFnBeOOoLRuFsMB1I2P0-OMHLFAMR130A-MPHPFML1I4C0-AMTH IFOM1N50-MH FM160-MH FM180-MH FM1100-MH FM1B150-MH.0F5M0 1200-M.0H64U
MMMaaaxrxkiimmiFnuuogmmrCBoRRdiMedecSiurerVrecontltitaoPgneeaalkuRseeveCrseoVr oCltAagESeluefcfitxriFfcooaErrlSwtyc2aphVVAreaRRd-srMRLaVMS3-cE0otEEKleStSaSrP2ig2sD2A121etJG2042i--cL8L-sLtahrpup132tl301yypienVsbF3o0421t084hKPdAir2e118.c9..538172t5055io05(VeVVn.sg.
316I0F60KMP=A22.80CA18,80;3T0J=K2P5A1o12C00808CA
42 56 70
)
Maximum DC Blocking Voltage
MAXIMUM RVADTC INEGSS22J0A-LND C3H0 ARAC40TE.R97IS55VT0(TICypS) IF6M0 = 2.0A8;0TJ=1501o0C0
C
1D 15
1EF 50
1GH05
1J 50
.002
--- 120
..003605200
..118597140
.090200
.008
.02
..006901V
.220V
.181
.115V
Maximum Average Forward ReRctaifiteind gCsurraetnt25°C ambieIOnt temperature unless oth1e.r2w5Vis(Measxp) ecif1ie.0d.
SUGGESAT
Maxim um DC PAD
Peak Forward Surge Current 8.3 ms singlePhablf -sFiner-ewRaeevevpearscIFeSkMCaugrereinst AatvailableIR
5µA TA =3025к
A
superimposed on
Typical Thermal
Typical Junction
RrCaeatespdiaslctoaiatnadcne(cJeE(ND(NoEtoeCte2m)1e)thoRHd)oaHloSgeMRVpnoaarltoxtfearidmdeguReeuDCcΘmCJJtpAfrRBooelrdovcpuekacrisntcegkfoinr gpac cokdTienrrgsucfofidxe”13Gsm5u”nAfsfix
Operating Temperature Range
RecoveTrJy Time -55 to +125
TA = 100к
40
“H IIFrr”==1002..052A5A, IR=1 -.505At,o
+150
℃
0.085”
Storage Temperature Range
TypicaTlSJTGunction
CJ 15pF -M65eatos+u1r7e5d at
RATING
Capacita°nCce
SYMBO1.L0MHVzA, LVUR=E4.0VUNITS
MMaaxxiiPmmeuummakFAovPrewuraalgsrdeeVRCPoeHlvtoaAewgrRseeAeaCrCt TD1uE.r0irRseAnIsSDtiTpaCItaCtS@ioTnAo=2nN5o℃1te0s:/110S. Y0HVMI0RiFgBµhOsTLewFmMap1ev2rea0-tfMuorHermFSMol1d3e0r-ME0xHe.5Fm0Mp1ti4o0n-MAHppFliMed1,5s0e-Me0PH.E7PUF0PMMD1i6re0c0-Mt.i5vHMeFA3Minn01ni80em0x0-MuN00Hmo.8tFe5Ms 171.0W0-MaHttFsM101.590-MH
FM1200-MH
0.92
U
V
m
RatePd eDaCkBlPocuklisngeVColutargreent of on 1@0/T1A0=01205µ℃s waveform
IPPM
10 SEE
TABLE 1
Amps
NOTES:
1- MeSasteuraeddayt 1SMtaHtZeaPndoawppelierdDreivsesrsipe avotlitoagne aoft4T.0LV=DC7.5 , Lead
2- Thleermnagl tRhess.is3ta7n5ce",F(r9om.5Jmunmcti)on to Ambient
www.mccsemi.com Peak Forward Surge Current,1/20 second/25°C (JEDEC Method)
PM(AV) 8 Watts
IFSM 400 Amps
Revision: D
Operating junction and Storage Temperature Range
TJ , TSTG
-515ofto3
+ 175
°C
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.