• Part: 2SA812RLT1
  • Description: General Purpose Transistors
  • Category: Transistor
  • Manufacturer: WILLAS
  • Size: 517.17 KB
Download 2SA812RLT1 Datasheet PDF
WILLAS
2SA812RLT1
Features Package outline - Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FE- ALTo Uw Rp Erofile surface mounted application in order to optimize board space. ƽ- HLigohw Vpooltwageer:lo Vs Cs EO, h=ig-5h0e Vff.iciency. ƽ- EHpiitgahxiacluprrlaennatrctayppea.bility, low forward voltage drop. SOD-123H 0.146(3.7) 0.130(3.3) ƽ- NHPi Nghcosmurpgleemceanpta: 2b Sili Cty1.623 ƽ- WGeuaderdcrlainrge ftohratotvheervmoalttaegriealporof pteroctdiuocnt. pliance with Ro HS requirements. - PUbl-t Frareheigpha-cskpaegede siswaitvcahiilnagb.le - RSoi Hlic Sopnreopdiutactxifaolrpplaacnkainr gchciopd, emesutafflixsi”li Gco” n junction. - HLaeloagde-fnrefreepeaprrtsodmuecet tfoernpvaircokninmgecnotadlesstaunffdixa“r Hds” of - MRMooi IHs Lt-Su Srp Ter Do Sd-e1unc9st5ift0oiv0r...