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KTD1898 - NPN Transistor

Key Features

  • Power dissipation TPCM: 500 mW (Tamb=25℃) . ,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 100 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2.

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Datasheet Details

Part number KTD1898
Manufacturer WEJ
File Size 137.62 KB
Description NPN Transistor
Datasheet download datasheet KTD1898 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RoHS KTD1898 KTD1898 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 100 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3.