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RoHS DAP222
DAP222 SWITCHING DIODE
DFEATURES: TPower dissipation
.,LPD: 150 mW (Tamb=25℃)
Collector current
IF: 100 mA
OCollector-base voltage VR: 80 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ICCIRCUIT:
0.20
1.60 1.00
0.30
1.60
0.50
0.81
SOT-523
ON1
3
R2
CTMARKING: P
EELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
LParameter EReverse breakdown voltage JReverse voltage leakage current
Symbol V(BR) IR
Test conditions
IR= 100µA
VR=70V
MIN MAX 80 0.1
EForward voltage
VF IF=100mA
1.2
WDiode capacitance
CD VR=6V, f=1MHz
3.5
UNIT V
µA
V
pF
Reverse recovery time
trr VR=6V, IF=5mA
4 ns
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.
DAP222 Datasheet