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RoHS BCP869
BC869 TRANSISTOR (PNP)
DFEATURES TPower dissipation
PCM:
.,LCollector current ICM: Collector-base voltage
V(BR)CBO:
500 -2 -32
mW (Tamb=25℃) A V
OOperating and storage junction temperature range CTJ, Tstg: -65℃ to +150℃
SOT-89
1. BASE 2. COLLECTOR 3. EMITTER
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage
Collector cut-off current
TEmitter cut-off current
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO
Test conditions Ic=-0.1mA, IE=0 IC= -1mA , IB=0 IE=-0.1mA, IC=0 VCB=-25V, IE=0 VEB=-5V, IC=0
MIN MAX UNIT -32 V -20 V -5 V
-0.1 µA -0.
BCP869 Datasheet