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RoHS BAV756DW
BAV756DW SWITCHING DIODE
DFEATURES TPower dissipation
.,LPD : 200 mW (Tamb=25℃)
Collector current
IF: 150 mA
OCollector-base voltage VR: 75 V
COperating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ICMARKING:KCA
SOT-363
RONELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
TParameter CReverse breakdown voltage EReverse voltage leakage current ELForward voltage JJunction capacitance WEReveres recovery time
Symbol
Test conditions
V(BR) R IR
VF Cj trr
IR= 2.5µA
VR=75V VR=20V IF=1mA IF=10mA IF=50mA IF=150mA
VR=0V f=1MHz
IF=IR=10mA Irr=0.1ХIR RL=100Ω
MIN MAX
75
2.5 0.025 715 855 1000 1250
2
4
UNIT V
µA
mV
pF
nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
RoHS BAV756DW
WEJ ELECTRONIC CO.,LTD
WEJ ELECTRONIC CO.
BAV756DW Datasheet
