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2SD780A - NPN EPITAXIAL SILICON TRANSISTOR

Download the 2SD780A datasheet PDF. This datasheet also covers the 2SD780 variant, as both devices belong to the same npn epitaxial silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Power dissipation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SD780-WEJ.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SD780A
Manufacturer WEJ
File Size 137.08 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet 2SD780A Datasheet

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Other Datasheets by WEJ

Part Number Description
2SD780 NPN EPITAXIAL SILICON TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RoHS 2SD780/2SD780A SOT-23-3L 2SD780/2SD780A DFEATURES Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR TPCM: 0.2 W (Tamb=25℃) 1. 02 .,LCollector current 0. 95¡ À0. 025 0. 35 2. 92¡ À0. 05 ICM: 0.3 Collector-base voltage A OV(BR)CBO: V(BR)CBO: 60 V 2SD780 80 V 2SD780A 1. 9 COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter Symbol Test conditions MIN NCollector-base breakdown voltage OCollector-emitter breakdown voltage V(BR)CBO V(BR)CEO Ic=0.1mA, IE=0 Ic=1mAIB=0 2SD780 2SD780A 2SD780 2SD780A 60 80 60 80 Emitter-base breakdown voltage V(BR)EBO IE=0.