1SS196 Description
RoHS 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR.
1SS196 Key Features
- VF .,L1
1SS196 Datasheet
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
1SS196 | Silicon Epitaxial Planar Type Diode |
JCET |
1SS196 | SWITCHING DIODE |
Galaxy Microelectronics |
1SS196 | Surface mount switching diode |
Won-Top Electronics |
1SS196 | SURFACE MOUNT FAST SWITCHING DIODE |
MLS Microelectronics |
1SS196 | Switching Diodes |
RoHS 1SS196 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR.