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NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
KTA1666
1. BASE 2. COLLECTOR 3. EMITTER
1 2 3
SOT-89
ABSOLUTE MAXIMUM RATINGS(Ta Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Value -50 -50 -5 -2.0 0.5 150
-55 to 150
Unit V V V
A W ˚C ˚C
WEITRON
http://www.weitron.com.tw
1/3
05-Feb-09
KTA1666
ELECTRICAL CHARACTERISTICS Characteristics
Collector-Base Breakdown Voltage IC=-1mA,IE=0 Collector-Emitter Breakdown Voltage IC=-10mA,IB =0 Emitter-Base Breakdown Voltage IC=0,IE=-1mA
IE=0,VCB=-50V
IC=0,VEB=-5V
Symbol BVCBO
Min -50
BVCEO BVEBO
-50 -5
ICBO IEBO -
ON CHARACTERISTICS
DC Current Gain IC=-0.5A,VCE=-2V IC=-1.