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PNP General Purpose Transistors
P b Lead(Pb)-Free
2SA812
1 2
3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature
Storage Temperature
Symbol VCBO VCEO VEBO IC PD
Tj Tstg
Value -60 -50 -5.0 -100 200 +150
-55 to +150
Unit V V V mA
mW °C °C
WEITRON
http://www.weitron.com.tw
1/3
08-Dec-06
2SA812
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage IC = -100µA, IE = 0A
Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A
Emitter-Base Breakdown Voltage IE= 100µA, IC=0
Collector Cutoff Current VCB = -60V, IE = 0A
Emitter Cutoff Current VEB = -5V, IC = 0A
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO
Min -60 -50 -5.
2SA812 Datasheet
