WML26N65C2, WMK26N65C2
WMN26N65C2, WMM26N65C2, WMJ26N65C2
650V 0.16Ω Super Junction Power MOSFET
Description
WMOSTM C2 is Wayon’s 2nd generation super
junction MOSFET family that is utilizing charge
balance technology for extremely low on-resistance
and low gate charge performance. WMOSTM C2 is
suitable for applications which require superior
power density and outstanding efficiency.
Features
VDS =700V @ Tj,max
Typ. RDS(on) =0.16Ω
100% UIS tested
Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
GDS
TO-220F
D
GDS
TO-262
G DS
TO-220
S
G
TO-263
G DS
TO-247
RoHS
compliant
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current1)
Pulsed drain current2)
( TC = 25°C )
( TC = 100°C )
Gate-source voltage
Avalanche energy, single pulse3)
Avalanche energy, repetitive2)
Avalanche current, repetitive2)
Power dissipation ( TC = 25°C )
- Derate above 25°C
Operating and storage temperature range
Continuous diode forward current
Diode pulse current
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
IAR
PD
Tj, Tstg
IS
IS,pulse
WMK/WMM/WMN/WMJ
650
20
12
50
±30
418
0.63
3.4
147
1.18
-55 to +150
20
50
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Rev.2.0, 2017
Symbol
RθJC
RθJA
WMK/WMM/WMN/WMJ
0.85
62
Doc.W0865012
WML
34
0.27
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
°C
A
A
WML
3.7
80
Unit
°C/W
°C/W
1 / 10
