WML12N65VD, WMK12N65VD, WMM12N65VD
WMN12N65VD, WMP12N65VD, WMO12N65VD
650V 0.6Ω Super Junction Power MOSFET
Description
WMOSTM VD is Wayon’s new high voltage power
MOSFET family that is utilizing advanced
technology for extremely low on-resistance and low
gate charge performance. WMOSTM VD is suitable
for applications which require superior power
density and outstanding efficiency.
Features
VDS =700V @ Tj,max
IDM =18A
Typ. RDS(on) =0.6Ω
100% UIS tested
Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
GDS
TO-220F
D
GDS
TO-262
GD S
TO-220
D
S
G
TO-263
GD S
TO-251
S
G
TO-252
RoHS
compliant
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current1)
Pulsed drain current2)
( TC = 25°C )
( TC = 100°C )
Gate-source voltage
Avalanche energy, single pulse3)
Avalanche energy, repetitive2)
Avalanche current, repetitive2)
Power dissipation ( TC = 25°C )
Operating and storage temperature range
Continuous diode forward current
Diode pulse current
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
IAR
PD
Tj, Tstg
IS
IS,pulse
WMK/WMM/WMO/WMP/WMN
650
10
5
18
±30
55
0.15
1.2
57
-55 to +150
10
18
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Rev.2.0, 2017
Symbol
RθJC
RθJA
WMK/WMM/WMO/WMP/WMN
2.2
62
Doc.W0865022
WML
27
WML
4.6
80
Unit
V
A
A
A
V
mJ
mJ
A
W
°C
A
A
Unit
°C/W
°C/W
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