WMM09N65VD Key Features
- VDS =700V @ Tj,max
- IDM =10.5A
- Typ. RDS(on) =1.0Ω
- 100% UIS tested
- Pb-free plating, Halogen free
- Part: WMM09N65VD
- Manufacturer: WAYON
- Size: 579.40 KB
Related WAYON Datasheets
| Part Number | Description |
|---|---|
| WMM09N65C2 | Super Junction Power MOSFET |
| WMM09N60C2 | Super Junction Power MOSFET |
| WMM09N60VD | Super Junction Power MOSFET |
| WMM04N60C2 | Super Junction Power MOSFET |
| WMM07N60C2 | Super Junction Power MOSFET |
WMM09N65VD Description
WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.