WML09N65C2, WMH09N65C2, WMM09N65C2
WMO09N65C2, WMP09N65C2, WMG09N65C2
650V 0.83Ω Super Junction Power MOSFET
Description
WMOSTM C2 is Wayon’s 2nd generation super
junction MOSFET family that is utilizing charge
balance technology for extremely low on-resistance
and low gate charge performance. WMOSTM C2 is
suitable for applications which require superior
power density and outstanding efficiency.
Features
VDS =700V @ Tj,max
Typ. RDS(on) =0.83Ω
100% UIS tested
Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
D
GDS
TO-220F
D
S
G
TO-252
S
G
TO-263
GD S
TO-251
DS
G
TO-251S3
S
GD
TO-251S2
RoHS
compliant
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current1)
Pulsed drain current2)
( TC = 25°C )
( TC = 100°C )
Gate-source voltage
Avalanche energy, single pulse3)
Avalanche energy, repetitive2)
Avalanche current, repetitive2)
Power dissipation ( TC = 25°C )
- Derate above 25°C
Operating and storage temperature range
Continuous diode forward current
Diode pulse current
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
IAR
PD
Tj, Tstg
IS
IS,pulse
WMH/WMM/WMO/WMP/WMG
650
6
3.6
12
±30
26
0.1
0.9
45
0.36
-55 to +150
6
12
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Rev.2.0, 2017
Symbol
RθJC
RθJA
WMH/WMM/WMO/WMP/WMG
2.8
62
Doc.W0865003
WML
26
0.21
WML
4.9
80
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
°C
A
A
Unit
°C/W
°C/W
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