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WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET

WMJ028N10HGS Description

WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET .
WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maint.

WMJ028N10HGS Features

* VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V
* High Speed Power Switching
* Low Gate Charge
* Low RDS(ON)

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Datasheet Details

Part number
WMJ028N10HGS
Manufacturer
WAYON
File Size
593.96 KB
Datasheet
WMJ028N10HGS-WAYON.pdf
Description
100V N-Channel Enhancement Mode Power MOSFET

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100V N-Channel Enhancement Mode Power MOSFET WAYON
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