WMJ028N10HGS mosfet equivalent, 100v n-channel enhancement mode power mosfet.
* VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V
* High Speed Power Switching
* Low Gate Charge
* Low RDS(ON)
* 100% EAS Guaranteed
Applications
RoH.
Features
* VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V
* High Speed Power Switching
* Low Gate Charge .
WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching ap.
Image gallery
TAGS
Manufacturer
Related datasheet