WMJ028N10HGS datasheet, mosfet equivalent, WAYON

Features and benefits

* VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V
* High Speed Power Switching
* Low Gate Charge
* Low RDS(ON)
* 100% EAS Guaranteed Applications RoH.

Application

Features
* VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V
* High Speed Power Switching
* Low Gate Charge .

Description

WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching ap.

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