WML10N65VD, WMK10N65VD, WMH10N65VD, WMM10N65VD
WMN10N65VD, WMO10N65VD, WMP10N65VD, WMG10N65VD
650V 0.8Ω Super Junction Power MOSFET
Description
WMOSTM VD is Wayon’s new high voltage power
MOSFET family that is utilizing advanced
technology for extremely low on-resistance and low
gate charge performance. WMOSTM VD is suitable
for applications which require superior power
density and outstanding efficiency.
Features
VDS =700V @ Tj,max
IDM =12.5A
Typ. RDS(on) =0.8Ω
100% UIS tested
Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
D
GD S
TO-220F
S
G
TO-263
G
GD S
TO-220
GD S
TO-262
D
DS
G
TO-251
S
G
TO-252
G DS
S
GD
TO-251S3 TO-251S2
RoHS
compliant
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current1)
Pulsed drain current2)
( TC = 25°C )
( TC = 100°C )
Gate-source voltage
Avalanche energy, single pulse3)
Avalanche energy, repetitive2)
Avalanche current, repetitive2)
Power dissipation ( TC = 25°C )
Operating and storage temperature range
Continuous diode forward current1)
Diode pulse current2)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
IAR
PD
Tj, Tstg
IS
IS,pulse
WMH_M_O_P_G_N_K
650
8
4
12.5
±30
26
0.1
0.9
45
-55 to +150
8
12.5
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Symbol
RθJC
RθJA
WMH_M_O_P_G_N_K
2.8
62
Rev.2.0, 2017
Doc.W0865008
WML
26
Unit
V
A
A
A
V
mJ
mJ
A
W
°C
A
A
WML
4.9
80
Unit
°C/W
°C/W
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