Datasheet4U Logo Datasheet4U.com

WMG09N65VD - Super Junction Power MOSFET

Description

WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance.

WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency.

Features

  • VDS =700V @ Tj,max.
  • IDM =10.5A.
  • Typ. RDS(on) =1.0Ω.
  • 100% UIS tested.
  • Pb-free plating, Halogen free.

📥 Download Datasheet

Datasheet Details

Part number WMG09N65VD
Manufacturer WAYON
File Size 591.35 KB
Description Super Junction Power MOSFET
Datasheet download datasheet WMG09N65VD Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by WAYON

Part Number Description
WMG09N65C2 Super Junction Power MOSFET
WMG09N60C2 Super Junction Power MOSFET
WMG09N60VD Super Junction Power MOSFET
WMG04N60C2 Super Junction Power MOSFET
WMG07N60C2 Super Junction Power MOSFET

Full PDF Text Transcription

Click to expand full text
WMK09N65VD, WML09N65VD, WMH09N65VD, WMM09N65VD WMN09N65VD, WMO09N65VD, WMP09N65VD, WMG09N65VD 650V 1.0Ω Super Junction Power MOSFET Description WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =700V @ Tj,max  IDM =10.5A  Typ. RDS(on) =1.
Published: |