WMA26N65C2
650V 0.16Ω Super Junction Power MOSFET
Description
WMOSTM C2 is Wayon’s 2nd generation super
junction MOSFET family that is utilizing charge
balance technology for extremely low on-resistance
and low gate charge performance. WMOSTM C2 is
suitable for applications which require superior
power density and outstanding efficiency.
Features
VDS =700V @ Tj,max
Typ. RDS(on) =0.16Ω
100% UIS tested
Pb-free plating, Halogen free
Applications
LED Lighting, Charger, Adapter, PC, LCD TV, Server
G
D
S
TO-220 ISO
RoHS
compliant
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current1)
Pulsed drain current2)
( TC = 25°C )
( TC = 100°C )
Gate-source voltage
Avalanche energy, single pulse3)
Avalanche energy, repetitive2)
Avalanche current, repetitive2)
Power dissipation ( TC = 25°C )
- Derate above 25°C
Operating and storage temperature range
Continuous diode forward current
Diode pulse current
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
IAR
PD
Tj, Tstg
IS
IS,pulse
WMA26N65C2
650
20
12
50
±30
418
0.63
3.4
147
1.18
-55 to +150
20
50
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Rev.2.0, 2018
Symbol
RθJC
RθJA
WMA26N65C2
0.85
62
Doc.W0865032
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
°C
A
A
Unit
°C/W
°C/W
1/7
