Description
The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.
Features
- Approvals:
D Rated recurring peak voltage (repetitive) D Creepage current resistance according to
VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm General features: VIORM = 600 VRMS
D BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002), Certificate number 7081 and 7402
D FIMKO (SETI): EN 60950,
Certificate number 12399
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D VDE 0884, Certificate number 94778
VDE 0884 rel.
CQY80G Datasheet
