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CQY36N Datasheet

GaAs Infrared Emitting Diode in Miniature (T-3/4) Package

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CQY36N
Vishay Telefunken
¾GaAs Infrared Emitting Diode in Miniature (T– )
Package
Description
CQY36N is a standard GaAs infrared emitting diode in
a miniature top view plastic package.
Its flat window provides a wide aperture making it ideal
for use with external optics.
The diode is case compatible to the BPW16N photo-
transistor, allowing the user to assemble his own
optical interrupters.
Features
D Suitable for pulse operation
D Standard T–¾ flat miniature package
D Wide angle of half intensity ϕ = ± 55°
D Peak wavelength lp = 950 nm
D Good spectral matching to Si photodetectors
Applications
Radiation source in near infrared range
94 8638
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xtp 100 ms
xt 3 s
Symbol
VR
IF
IFSM
PV
Tj
Tstg
Tsd
RthJA
Value
5
100
2
170
100
–25...+100
245
450
Unit
V
mA
A
mW
°C
°C
°C
K/W
Document Number 81001
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)


Vishay Intertechnology Electronic Components Datasheet

CQY36N Datasheet

GaAs Infrared Emitting Diode in Miniature (T-3/4) Package

No Preview Available !

CQY36N
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Breakdown Voltage
Junction Capacitance
Radiant Intensity
Radiant Power
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Rise time
Fall Time
xTest Conditions
IF = 50 mA, tp 20 ms
IR = 100 mA
Symbol
VF
V(BR)
Min
5
Typ Max Unit
1.3 1.6 V
V
VR = 0 V, f = 1 MHz, E = 0
xIF = 50 mA, tp 20 ms
xIF = 50 mA, tp 20 ms
Cj
Ie 0.7
fe
50
1.5
10
pF
mW/sr
mW
IF = 50 mA
TKfe
–0.8
%/K
ϕ ±55 deg
IF = 50 mA
IF = 50 mA
lp 950 nm
Dl 50 nm
xIF
tp
=
1.5
10
A,
ms
tp/T
=
0.01,
tr
400 ns
xIF
tp
=
1.5
10
A,
ms
tp/T
=
0.01,
tf
450 ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
250 125
200 100
150
RthJA
100
75
RthJA
50
50 25
0
0
94 8029 e
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
0
0
94 7916 e
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81001
Rev. 2, 20-May-99


Part Number CQY36N
Description GaAs Infrared Emitting Diode in Miniature (T-3/4) Package
Maker Vishay Telefunken
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CQY36N Datasheet PDF






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Vishay Telefunken





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