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CQX48 Datasheet

GaAs Infrared Emitting Diode in Side View Package

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CQX48
Vishay Telefunken
GaAs Infrared Emitting Diode in Side View Package
Description
CQX48 is a standard GaAs infrared emitting diode in
a flat sideview plastic package.
A small recessed spherical lens provides an improved
radiant intensity in a low profile case.
The diode is case compatible to the BPW78 photo-
transistor, allowing the user to assemble his own
optical interrupters.
Features
D Side view case with spherical lens
D Radiation direction perpendicular to mounting
direction
D Angle of half intensity ϕ = ± 25°
D Peak wavelength lp = 950 nm
D High reliability
D Case compatible with BPW78
94 8743
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xtp 100 ms
xt 5 s
Symbol
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
6
100
2
170
100
–40...+100
–40...+100
260
450
Unit
V
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81000
Rev. 5, 16-Nov-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)


Vishay Intertechnology Electronic Components Datasheet

CQX48 Datasheet

GaAs Infrared Emitting Diode in Side View Package

No Preview Available !

CQX48
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Breakdown Voltage
Junction Capacitance
Radiant Power
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Rise time
Fall Time
xTest Conditions
IF = 100 mA, tp 20 ms
IR = 100 mA
Symbol
VF
V(BR)
Min
6
Typ Max Unit
1.3 1.7 V
V
xVR = 0 V, f = 1 MHz, E = 0
IF = 50 mA, tp 20 ms
Cj
fe
50 pF
10 mW
IF = 50 mA
TKfe
–0.8
%/K
ϕ ±25 deg
IF = 50 mA
IF = 50 mA
lp 950 nm
Dl 50 nm
xIF
tp
=
110Am,stp/T
=
0.01,
tr
400 ns
xIF
tp
=
110Am,stp/T
=
0.01,
tf
450 ns
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Radiant Intensity
Test Conditions
xIF=50 mA,
tp 20ms
Type
CQX 48 B
Symbol Min
Ie 2
Typ Max Unit
mW/sr
Typical Characteristics (Tamb = 25_C unless otherwise specified)
250 125
200 100
150
RthJA
100
75
RthJA
50
50 25
0
0 20 40 60 80 100
94 8029 e
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
0
0 20 40 60 80 100
94 7916 e
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81000
Rev. 5, 16-Nov-99


Part Number CQX48
Description GaAs Infrared Emitting Diode in Side View Package
Maker Vishay Telefunken
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CQX48 Datasheet PDF






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Vishay Telefunken





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