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VSMY2850G - High Speed Infrared Emitting Diodes

Description

As part of the SurfLightTM portfolio, the VSMY2850 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).

Features

  • Package type: surface-mount.
  • Package form: GW, RGW.
  • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8.
  • Peak wavelength: λp = 850 nm.
  • High reliability.
  • High radiant power.
  • Very high radiant intensity.
  • Angle of half intensity: ϕ = ± 10°.
  • Suitable for high pulse current operation.
  • Terminal configurations: gullwing or reverse gullwing.
  • Package matches with detector VEMD2500X01 series.
  • Floor life:.

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Datasheet Details

Part number VSMY2850G
Manufacturer Vishay
File Size 154.68 KB
Description High Speed Infrared Emitting Diodes
Datasheet download datasheet VSMY2850G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VSMY2850RG, VSMY2850G Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2850RG VSMY2850G DESCRIPTION As part of the SurfLightTM portfolio, the VSMY2850 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR illumination FEATURES • Package type: surface-mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.
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