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VSLB3940 - High Speed Infrared Emitting Diode

Description

VSLB3940 is a high speed infrared emitting diode in GaAlAs, DDH technology, molded in a clear plastic package.

Lead (Pb)-free component Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS Infrared remote control units PRODUCT

Features

  • Package type: leaded.
  • Package form: T-1, clear epoxy.
  • Dimensions: Ø 3 mm.
  • Peak wavelength: λp = 940 nm.
  • High speed.
  • High radiant power.
  • High radiant intensity 94 8636.
  • Angle of half intensity: ϕ = ± 22°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching to Si photodetectors.

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Datasheet Details

Part number VSLB3940
Manufacturer Vishay
File Size 105.89 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet VSLB3940 Datasheet

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Full PDF Text Transcription (Reference)

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VSLB3940 Vishay Semiconductors www.DataSheet4U.com High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity 94 8636 • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching to Si photodetectors DESCRIPTION VSLB3940 is a high speed infrared emitting diode in GaAlAs, DDH technology, molded in a clear plastic package.
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