TA33 Overview
Key Features
- Center tap feature
- Resistor material: self
- passivating Tantalum Nitride
- Silicon substrate for good power dissipation
- 55 °C to + 155 °C
- 55 °C to + 155 °C <
- 35 dB typical 0.01 µV/°C 100 ppm 1 year at + 25 °C MIL-STD-202 Method 308 2000 hrs. at +70 °C under Pn for RT = R1 + R2 - 55 °C to + 155 °C
- 55 °C to + 155 °C CONDITIONS VISHAY THIN FILM
- FRANCE +33.4.93.37.28.24 FAX: +33.4.93.37.27.31
- GERMANY +49.9287.710 FAX: +49 9287.70435
