SiHL510 mosfet equivalent, power mosfet.
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating Temperature <.
at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contr.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industri.
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