SiHFI9610G mosfet equivalent, power mosfet.
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* P-Channel
* Dynamic dV/dt Ra.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and extern.
G
G D S
D P-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for .
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