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Vishay Intertechnology Electronic Components Datasheet

STPS1L30UPBF Datasheet

Schottky Rectifier

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STPS1L30UPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
SMB
Cathode
Anode
www.DataSheet4U.com
PRODUCT SUMMARY
IF(AV)
VR
IRM
1.0 A
30 V
15 mA at 125 °C
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
RoHS
COMPLIANT
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
The STPS1L30UPbF surface mount Schottky rectifier
has been designed for applications requiring low
forward drop and small foot prints on PC board. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 ms sine
VF 1.0 Apk, TJ = 125 °C
TJ Range
VALUES
1.0
30
360
0.30
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
STPS1L30UPbF
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TL = 106 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 1 A, L = 6 mH
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
1.0
360
75
3.0
1.0
UNITS
A
mJ
A
Document Number: 94324
Revision: 15-Aug-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

STPS1L30UPBF Datasheet

Schottky Rectifier

No Preview Available !

STPS1L30UPbF
Vishay High Power Products Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Maximum junction capacitance
www.DTaytapiSchael seetr4ieUs.cinodmuctance
Maximum voltage rate of change
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
CT
LS
dV/dt
TEST CONDITIONS
1A
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
TJ = 125 °C
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.420
0.470
0.300
0.375
0.2
5.0
15
200
2.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
RthJL (2)
RthJA
DC operation
TEST CONDITIONS
Approximate weight
Marking device
Case style SMB (similar to DO-214AA)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
- 55 to 150
UNITS
°C
25
°C/W
80
0.10 g
0.003
oz.
V13L
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94324
Revision: 15-Aug-08


Part Number STPS1L30UPBF
Description Schottky Rectifier
Maker Vishay Siliconix
Total Page 5 Pages
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