SIHG460B
Key Features
- Optimal Design 550 0.25 - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS)
- Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching
- Material categorization: For definitions of compliance please see Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply. TO-247AC G S
- G S N-Channel MOSFET
