SIC779 stage equivalent, integrated drmos power stage.
* Industry benchmark Gen III MOSFETs with integrated Schottky diode
* DrMOS compliant gate driver IC
* Enables Vcore switching at 1 MHz
* Easily achieve >.
The SiC779 incorporates an advanced MOSFET gate driver IC. This IC accepts a single PWM input from the VR controller an.
The SiC779 is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC. The device complies with the Intel DrMOS standard for desktop and server Vcore power stages. The SiC779 .
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