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Vishay Intertechnology Electronic Components Datasheet

SI4940DY Datasheet

Dual N-Channel 40-V (D-S) MOSFET

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Si4940DY
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.036 @ VGS = 10 V
40
0.059 @ VGS = 4.5 V
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
ID (A)
5.7
4.4
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Automotive Airbags
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
40
"20
5.7 4.2
4.5 3.4
30
1.8 0.9
2.1 1.1
1.3 0.7
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71649
S-04277—Rev. B, 16-Jul-01
Symbol
RthJA
RthJF
Typical
50
90
28
Maximum
60
110
34
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI4940DY Datasheet

Dual N-Channel 40-V (D-S) MOSFET

No Preview Available !

Si4940DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 32 V, VGS = 0 V
VDS = 32 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 5.7 A
VGS = 4.5 V, ID = 4.4 A
VDS = 15 V, ID = 5.7 A
IS = 1.8 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 20 V, VGS = 10 V, ID = 5.7 A
VDD = 20 V, RL = 20 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.8 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0 V
"100
nA
1
mA
5
30 A
0.03
0.048
12
0.8
0.036
0.059
1.1
W
S
V
9.0 14
1.8 nC
2.3
1.0 W
7 15
12 25
15 30 ns
8 15
35 70
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
25
20
15
10
5
0
0
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2
Output Characteristics
VGS = 10 thru 6 V
5V
4V
3V
1234
VDS Drain-to-Source Voltage (V)
5
Transfer Characteristics
30
25
20
15
10
5
0
0
TC = 125_C
25_C
55_C
12345
VGS Gate-to-Source Voltage (V)
6
Document Number: 71649
S-04277Rev. B, 16-Jul-01


Part Number SI4940DY
Description Dual N-Channel 40-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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