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SI4896DY Datasheet

N-Channel 80-V (D-S) MOSFET

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N-Channel 80-V (D-S) MOSFET
Si4896DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
80
rDS(on) (W)
0.0165 @ VGS = 10 V
0.022 @ VGS = 6.0 V
ID (A)
9.5
8.3
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4896DY
Si4896DY-T1 (with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
IS
PD
TJ, Tstg
80
"20
9.5 6.7
7.6 5.4
50
40
2.8 1.4
3.1 1.56
2.0 1.0
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71300
S-03950—Rev. B, 26-May-03
Symbol
RthJA
RthJF
Typical
33
65
17
Maximum
40
80
21
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4896DY Datasheet

N-Channel 80-V (D-S) MOSFET

No Preview Available !

Si4896DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 64 V, VGS = 0 V
VDS = 64 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 6.0 V, ID = 8.0 A
VDS = 15 V, ID = 10 A
IS = 2.8 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 40 V, VGS = 10 V, ID = 10 A
VDD = 40 V, RL = 40 W
ID ^ 1.0 A, VGEN = 10 V, RG = 6 W
IF = 2.8 A, di/dt = 100 A/ms
Min Typ Max Unit
2.0 V
"100
nA
1
mA
5
50 A
0.0135
0.0175
25
0.75
0.0165
0.022
1.1
W
S
V
34 41
7.5 nC
11.0
0.2 0.85 1.2
W
17 25
11 17
40 60 ns
31 45
45 75
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
40
30
20
10
0
0
www.vishay.com
2
Output Characteristics
VGS = 10 thru 6 V
5V
3, 4 V
2468
VDS - Drain-to-Source Voltage (V)
10
Transfer Characteristics
50
40
30
20
10
0
0
TC = 125_C
25_C
- 55_C
12345
VGS - Gate-to-Source Voltage (V)
6
Document Number: 71300
S-03950—Rev. B, 26-May-03


Part Number SI4896DY
Description N-Channel 80-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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