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Vishay Intertechnology Electronic Components Datasheet

SI4866DY Datasheet

N-Channel Reduced Qg/ Fast Switching MOSFET

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Si4866DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
12
rDS(on) (W)
0.0055 @ VGS = 4.5 V
0.008 @ VGS = 2.5 V
ID (A)
17
14
FEATURES
D TrenchFETr Power MOSFETS
D PWM Optimized for High Efficiency
D Low Output Voltage
D 100% RG Tested
APPLICATIONS
D Synchronous Rectifier
D Point-of-Load Synchronous Buck Converter
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
12
"8
17 11
14 8
"50
2.7 1.40
3.0 1.6
2.0 1.0
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71699
S-03662—Rev. B, 14-Apr-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
34
67
15
Maximum
41
80
19
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI4866DY Datasheet

N-Channel Reduced Qg/ Fast Switching MOSFET

No Preview Available !

Si4866DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8 V
VDS = 9.6 V, VGS = 0 V
VDS = 9.6 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 17
VGS = 2.5 V, ID = 14
VDS = 6 V, ID = 17
IS = 2.7 A, VGS = 0 V
0.6
40
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 6 V, VGS = 4.5 V, ID = 17 A
VDD = 6 V, RL = 6 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 2.7 A, di/dt = 100 A/ms
1.5
Typ Max Unit
"100
1
5
0.0045
0.0065
80
0.70
0.0055
0.008
1.1
V
nA
mA
A
W
S
V
21 30
4.6 nC
3.5
2.3 3.9 W
28 42
32 48
82 123 ns
35 53
60 90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 10 thru 2.5 V
40
2V
30
20
10
0
0
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2
1.5 V
1234
VDS - Drain-to-Source Voltage (V)
5
Transfer Characteristics
50
40
30
20
10
0
0.0
TC = 125_C
25_C
- 55_C
0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
2.5
Document Number: 71699
S-03662—Rev. B, 14-Apr-03


Part Number SI4866DY
Description N-Channel Reduced Qg/ Fast Switching MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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