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Vishay Intertechnology Electronic Components Datasheet

SI4848DY Datasheet

N-Channel 150-V (D-S) MOSFET

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N-Channel 150-V (D-S) MOSFET
Si4848DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
150
rDS(on) (W)
0.085 @ VGS = 10 V
0.095 @ VGS = 6.0 V
ID (A)
3.7
3.5
D
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4848DY
Si4848DY-T1 (with Tape and Reel)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
IS
PD
TJ, Tstg
150
"20
3.7 2.7
3.0 2.1
25
10
2.5 1.3
3.0 1.5
1.9 1.0
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71356
S-03950—Rev. B, 26-May-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
35
68
18
Maximum
42
82
23
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI4848DY Datasheet

N-Channel 150-V (D-S) MOSFET

No Preview Available !

Si4848DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 120 V, VGS = 0 V
VDS = 120 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 3.5 A
VGS = 6.0 V, ID = 3.0 A
VDS = 15 V, ID = 5 A
IS = 2.5 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 75 V, VGS = 10 V, ID = 3.5 A
VDD = 75 V, RL = 21 W
ID ^ 3.5 A, VGEN = 10 V, RG = 6 W
IF = 2.5 A, di/dt = 100 A/ms
Min Typ Max Unit
2.0 V
"100
nA
1
mA
5
25 A
0.068
0.076
15
0.75
0.085
0.095
1.2
W
S
V
17 21
3.2 nC
6.0
0.5 0.85 1.8
W
9.0 14
10 15
24 35 ns
17 25
45 70
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
25
20
15
10
5
0
0
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2
Output Characteristics
VGS = 10 thru 6 V
5V
3, 4 V
2468
VDS - Drain-to-Source Voltage (V)
10
Transfer Characteristics
25
20
15
10
5
0
0
TC = 125_C
25_C
- 55_C
123456
VGS - Gate-to-Source Voltage (V)
Document Number: 71356
S-03950—Rev. B, 26-May-03


Part Number SI4848DY
Description N-Channel 150-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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