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SI4825DY Datasheet

P-Channel 30-V (D-S) MOSFET

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New Product
P-Channel 30-V (D-S) MOSFET
Si4825DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.014 @ VGS = –10 V
–30
0.022 @ VGS = –4.5 V
ID (A)
–11.5
–9.2
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
SSS
G
DDDD
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS –30
VGS "25
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
–11.5
–8.1
–9.2
–6.5
–50
–2.5
–1.3
3.0 1.5
1.9 0.9
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71291
S-10679—Rev. A, 31-Jul-00
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
32
68
15
Maximum
42
85
18
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
1


Vishay Intertechnology Electronic Components Datasheet

SI4825DY Datasheet

P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4825DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "25 V
VDS = –24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V, TJ = 55_C
VDS v –5 V, VGS = –10 V
VGS = –10 V, ID = –11.5 A
VGS = –4.5 V, ID = –9.2 A
VDS = –15 V, ID = –11.5 A
IS = –2.5 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = –15 V, VGS = –10 V, ID = –11.5 A
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = –2.5 A, di/dt = 100 A/ms
Min Typ Max Unit
–1.0
–50
"100
–1
–5
0.012
0.018
28
–0.8
0.014
0.022
–1.2
V
nA
mA
A
W
S
V
55 71
15.5
nC
7.5
15 25
13 20
97 150 ns
51 75
45 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 10 thru 5 V
4V
40
50
40
30 30
20
3V
10
20
10
0
012345
VDS – Drain-to-Source Voltage (V)
0
0
Transfer Characteristics
TC = 125_C
25_C
–55_C
1234
VGS – Gate-to-Source Voltage (V)
5
www.vishay.com S FaxBack 408-970-5600
2
Document Number: 71291
S-10679—Rev. A, 31-Jul-00


Part Number SI4825DY
Description P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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