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SI4684DY - N-Channel 30-V (D-S) MOSFET

Description

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Features

  • Extremely Low Qgd WFET® Technology for Low Switching Losses.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested RoHS.

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Datasheet Details

Part number SI4684DY
Manufacturer Vishay
File Size 103.40 KB
Description N-Channel 30-V (D-S) MOSFET
Datasheet download datasheet SI4684DY Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si4684DY New Product www.DataSheet4U.com Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0094 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A)a 16 14 Qg (Typ) 14 nC FEATURES • Extremely Low Qgd WFET® Technology for Low Switching Losses • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server SO-8 D S S S G 1 2 3 4 Top View Ordering Information: Si4684DY-T1-E3 (Lead (Pb)-free) 8 7 6 5 D D D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 30 ± 12 16 12.9 12b,c 9.
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