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Vishay Intertechnology Electronic Components Datasheet

SI4562DY Datasheet

N- and P-Channel 2.5-V (G-S) MOSFET

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Si4562DY
Vishay Siliconix
N- and P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
20
0.025 at VGS = 4.5 V
0.035 at VGS = 2.5 V
P-Channel
- 20
0.033 at VGS = - 4.5 V
0.050 at VGS = - 2.5 V
ID (A)
7.1
6.0
- 6.2
- 5.0
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 2.5 Rated
• Compliant to RoHS directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4562DY-T1-E3 (Lead (Pb)-free)
Si4562DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
S2
G2
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 - 20
± 12
7.1 - 6.2
5.7 - 4.9
40 - 40
1.7 - 1.7
2.0
1.3
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t 10 s.
Symbol
RthJA
N- or P-Channel
62.5
Unit
V
A
W
°C
Unit
°C/W
Document Number: 70717
S09-0867-Rev. C, 18-May-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4562DY Datasheet

N- and P-Channel 2.5-V (G-S) MOSFET

No Preview Available !

Si4562DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
0.6
- 0.6
Typ.
Max.
1.6
- 1.6
± 100
± 100
1
-1
5
-5
Unit
V
nA
µA
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb RDS(on)
Forward Transconductanceb
Diode Forward Voltageb
Dynamicb
gfs
VSD
VDS 5 V, VGS = 4.5 V
VDS - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 7.1 A
VGS = - 4.5 V, ID = - 6.2 A
VGS = 2.5 V, ID = 6.0 A
VGS = - 2.5 V, ID = - 5.0 A
VDS = 10 V, ID = 7.1 A
VDS = - 10 V, ID = - 6.2 A
IS = 1.7 A, VGS = 0 V
IS = - 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 7.1 A
Qgs
P-Channel
Qgd VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 10 V, RL = 10 Ω
ID 1 A, VGEN = 4.5 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 10 V, RL = 10 Ω
ID - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Sorce-Drain Reverse Recovery Tme
trr
IF = 1.7 A, dI/dt = 100 A/µs
IF = - 1.7 A, dI/dt = 100 A/µs
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
- 20
0.019
0.027
0.025
0.040
27
20
0.025
0.033
0.035
0.050
1.2
- 1.2
25 50
22 35
6.5
7
4
3.5
40 60
27 50
40 60
32 50
90 150
95 150
40 60
45 70
40 80
40 80
A
Ω
S
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70717
S09-0867-Rev. C, 18-May-09


Part Number SI4562DY
Description N- and P-Channel 2.5-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 10 Pages
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Vishay Siliconix





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