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Vishay Intertechnology Electronic Components Datasheet

SI4465DY Datasheet

P-Channel 1.8-V (G-S) MOSFET

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P-Channel 1.8-V (G-S) MOSFET
Si4465DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.009 @ VGS = - 4.5 V
- 8 0.011 @ VGS = - 2.5 V
0.016 @ VGS = - 1.8 V
ID (A)
- 14
- 12
- 10
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4465DY
Si4465DY-T1 (with Tape and Reel)
SSS
G
DDDD
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-8
"8
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
- 14
- 11
- 40
- 2.1
2.5
1.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board.
b. t v10 sec.
Document Number: 70830
S-31989—Rev. B, 13-Oct-03
t v 10 sec
Steady State
Symbol
RthJA
Typical
80
Maximum
50
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4465DY Datasheet

P-Channel 1.8-V (G-S) MOSFET

No Preview Available !

Si4465DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = - 8 V, VGS = 0 V
VDS = - 8 V, VGS = 0 V, TJ = 55_C
VDS w - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 14 A
VGS = - 2.5 V, ID = - 12 A
VGS = - 1.8 V, ID = - 10 A
VDS = - 10 V, ID = - 14 A
IS = - 2.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 4 V, VGS = - 4.5 V, ID = - 14 A
VDD = - 4 V, RL = 4 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
IF = - 2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.45
- 20
0.007
0.009
0.012
60
0.7
"100
-1
-5
0.009
0.011
0.016
- 1.2
V
nA
mA
A
W
S
V
80 120
15 nC
9
45 90
55 110
380 760 ns
190 380
80 120
www.vishay.com
2
Document Number: 70830
S-31989—Rev. B, 13-Oct-03


Part Number SI4465DY
Description P-Channel 1.8-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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Vishay Siliconix





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